Performance of Non Punch-Through Trench Gate Field-Stop IGBT for Power Control System and Automotive Application

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  • ABSTRACT

    In this paper, we have analyzed the electrical characteristics of 1200V trench gate field stop IGBT and have compared to NPT planar type IGBT and NPT planar field stop IGBT. As a result of analyzing, we obtained superior electrical characteristics of trench gate field stop IGBT than conventional IGBT. To begin with, the breakdown voltage characteristic was showed 1,460 V and on state voltage drop was showed 0.7 V. We obtained 3.5 V threshold voltage, too. To use these results, we have extracted optimal design and process parameter and designed trench gate field stop IGBT. The designed trench gate IGBT will use to inverter of renewable energy and automotive industry.


  • KEYWORD

    IGBT , Trench , Planar , Field-stop , NPT , Power Devices , High Efficiency , High Breakdown Voltage , On-state Voltage drop

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  • [Fig. 1.] The structure of Planar NPT IGBT.
    The structure of Planar NPT IGBT.
  • [Table 1.] Basic process parameters.
    Basic process parameters.
  • [Fig. 2.] The Breakdown Characteristics according to Drift lengths of Planar NPT IGBT.
    The Breakdown Characteristics according to Drift lengths of Planar NPT IGBT.
  • [Fig. 3.] The electrical characteristics of planar NPT Field Stop IGBT according to JFET dose (a) Vth, (b) Vce-sat, and (c) BV.
    The electrical characteristics of planar NPT Field Stop IGBT according to JFET dose (a) Vth, (b) Vce-sat, and (c) BV.
  • [Table 2.] Planar NPT IGBT Final process parameters.
    Planar NPT IGBT Final process parameters.
  • [Fig. 4.] The structure of planar NPT Field Stop IGBT.
    The structure of planar NPT Field Stop IGBT.
  • [Table 3.] Planar NPT IGBT Final process parameters.
    Planar NPT IGBT Final process parameters.
  • [Fig. 5.] The electrical characteristics of planar NPT FS IGBT according to drift depth (a) BV, (b) Field-effect, and (c) I-V Characteristics.
    The electrical characteristics of planar NPT FS IGBT according to drift depth (a) BV, (b) Field-effect, and (c) I-V Characteristics.
  • [Fig. 6.] The electrical characteristics of planar NPT FS IGBT according to Buffer depth and dose (a) Field-effect, (b) I-V Characteristic, (c) BV, and (d)Vce-sat.
    The electrical characteristics of planar NPT FS IGBT according to Buffer depth and dose (a) Field-effect, (b) I-V Characteristic, (c) BV, and (d)Vce-sat.
  • [Fig. 7.] The electrical characteristics of planar NPT FS IGBT according to p+ collector dose (a) BV and (b) Vce-sat.
    The electrical characteristics of planar NPT FS IGBT according to p+ collector dose (a) BV and (b) Vce-sat.
  • [Fig. 8.] The electrical characteristics of planar NPT FS IGBT according to N buffer dose and Drift depth (a) BV and (b) Vce-sat.
    The electrical characteristics of planar NPT FS IGBT according to N buffer dose and Drift depth (a) BV and (b) Vce-sat.
  • [Fig. 9.] The Structure of Trench Gate NPT Field Stop IGBT.
    The Structure of Trench Gate NPT Field Stop IGBT.
  • [Table 4.] Planar NPT IGBT Final process parameters.
    Planar NPT IGBT Final process parameters.
  • [Fig. 10.] The electrical characteristics of planar NPT IGBT, Planar FS IGBT and Trench FS IGBT (a) Vth, (b) BV, and (c) Vce-sat.
    The electrical characteristics of planar NPT IGBT, Planar FS IGBT and Trench FS IGBT (a) Vth, (b) BV, and (c) Vce-sat.